中压大电流SGT MOS-深圳市虹美功率半导体有限公司

产品列表

型号（Part Number）	工艺 (Technology)	封装（Package）	沟道（Polarity）	VDS(Max) BVDSS(V)	ID(Max) ID(A)	IDM	VTH (Typ)	VGS	RDS(ON) @-10VTyp (mΩ)	RDS(ON) @-4.5VTyp (mΩ)	RDS(ON) @-2.5VTyp (mΩ)	直接替代型号（compatible）
Reset	SGT工艺 (Split Gate) SGT工艺(Split Gate) SGT工艺 (Split Gate) Reset	DFN3X3-8L DFN5X6-8L TO-220 TO-220/TO-252 TO-247 TO-252 TO-263 Reset	N N沟道 P沟道 Reset	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK	Reset OK

HMS50N03Q				0.00V	0.00A	0.00A	0.00V	0.00V	0.00mΩ	0.00mΩ	0.00mΩ
HMS65N03Q				0.00V	0.00A	0.00A	0.00V	0.00V	0.00mΩ	0.00mΩ	0.00mΩ
HMS80N85D	SGT工艺 (Split Gate)	TO-263	N沟道	80.00V	85.00A	255.00A	3.00V	20.00V	6.80mΩ	0.00mΩ	0.00mΩ
HMS4030D	SGT工艺 (Split Gate)	TO-263	N沟道	100.00V	115.00A	345.00A	2.50V	20.00V	8.50mΩ	0.00mΩ	0.00mΩ	IRLB4030/IRFB4310/AOT1100/AOT290/AOT410
HMS200N03D	SGT工艺 (Split Gate)	DFN5X6-8L	N沟道	30.00V	200.00A	600.00A	1.50V	20.00V	0.80mΩ	0.00mΩ	0.00mΩ	AON6406/AON6512/AON6500/AON6560
HMS80N85	SGT工艺 (Split Gate)	TO-220	N沟道	80.00V	85.00A	255.00A	3.00V	20.00V	6.80mΩ	0.00mΩ	0.00mΩ
HMS60N10DA	SGT工艺 (Split Gate)	DFN5X6-8L	N沟道	100.00V	60.00A	240.00A	1.70V	20.00V	7.20mΩ	0.00mΩ	0.00mΩ	AON6298/AON6450/SiR878ADP/SM1A06NSKP/SiR876ADP/SiR882ADP/SiR846ADP/SiR804DP/SiR870ADP/SiJ470DP
HMS125N10D	SGT工艺 (Split Gate)	DFN5X6-8L	N沟道	100.00V	125.00A	500.00A	2.50V	20.00V	3.80mΩ	0.00mΩ	0.00mΩ
HMS4030	SGT工艺 (Split Gate)	TO-220	N沟道	100.00V	115.00A	345.00A	2.50V	20.00V	8.50mΩ	0.00mΩ	0.00mΩ	IRLB4030/IRFB4310/AOT1100/AOT290/AOT410
HMS4110T	SGT工艺 (Split Gate)	TO-247	N沟道	100.00V	180.00A	720.00A	3.00V	20.00V	3.00mΩ	0.00mΩ	0.00mΩ	IRFB4110/IRFB4310/AOT1100/AOT290/AOT410
HMS10N15D	SGT工艺 (Split Gate)	DFN5X6-8L	N沟道	150.00V	10.00A	31.80A	2.00V	20.00V	57.00mΩ	0.00mΩ	0.00mΩ	AON6454A
HMS100N15	SGT工艺(Split Gate)	TO-220	N沟道	150.00V	100.00A	300.00A	3.00V	20.00V	6.60mΩ	0.00mΩ	0.00mΩ	IRFB52N15D/IRFB41N15D/IRF3415/IRFB4615/IRFB5615/STP50N15/IXTH50N15/IRFB4321/G/SUP85N15