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深圳市虹美功率半导体有限公司

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中压大电流SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS80N85D SGT工艺
(Split Gate)
TO-263 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 0.00mΩ 0.00mΩ
HMS4030D SGT工艺
(Split Gate)
TO-263 N沟道 100.00V 115.00A 345.00A 2.50V 20.00V 8.50mΩ 0.00mΩ 0.00mΩ IRLB4030/IRFB4310/AOT1100/AOT290/AOT410
HMS135N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 135.00A 405.00A 2.50V 20.00V 2.20mΩ 3.20mΩ 0.00mΩ AON6590/AON6144/AON6152/AON6154/AON6156
HMS150N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 150.00A 600.00A 2.50V 20.00V 2.80mΩ 3.10mΩ 0.00mΩ AON6160
HMS60N08D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 80.00V 60.00A 180.00A 2.50V 20.00V 6.80mΩ 7.80mΩ 0.00mΩ AON6278
HMS85N08K SGT工艺
(Split Gate)
TO-252 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 7.80mΩ 0.00mΩ
HMS80N85 SGT工艺
(Split Gate)
TO-220 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 0.00mΩ 0.00mΩ
HMS125N10D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 100.00V 125.00A 500.00A 2.50V 20.00V 3.80mΩ 0.00mΩ 0.00mΩ
HMS4030 SGT工艺
(Split Gate)
TO-220 N沟道 100.00V 115.00A 345.00A 2.50V 20.00V 8.50mΩ 0.00mΩ 0.00mΩ IRLB4030/IRFB4310/AOT1100/AOT290/AOT410
HMS4110T SGT工艺
(Split Gate)
TO-247 N沟道 100.00V 180.00A 720.00A 3.00V 20.00V 3.00mΩ 0.00mΩ 0.00mΩ IRFB4110/IRFB4310/AOT1100/AOT290/AOT410
HMS10N15D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 150.00V 10.00A 31.80A 2.00V 20.00V 57.00mΩ 0.00mΩ 0.00mΩ AON6454A
HMS20N15KA SGT工艺
(Split Gate)
TO-252 N沟道 150.00V 20.00A 80.00A 1.90V 20.00V 56.00mΩ 68.00mΩ 0.00mΩ AOD254/AOD256/AOD4454/AP20N15GH/IRFR24N15D/SUD15N15/SUD25N15/IRFR4615/IRFR18N15D
HMS100N15 SGT工艺(Split Gate) TO-220 N沟道 150.00V 100.00A 300.00A 3.00V 20.00V 6.60mΩ 0.00mΩ 0.00mΩ IRFB52N15D/IRFB41N15D/IRF3415/IRFB4615/IRFB5615/STP50N15/IXTH50N15/IRFB4321/G/SUP85N15