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深圳市虹美功率半导体有限公司

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中压大电流SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS120N03D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 30.00V 120.00A 340.00A 1.70V 20.00V 1.95mΩ 2.85mΩ 0.00mΩ AON6512
HMS135N03D SGT工艺(Split Gate) DFN5X6-8L N沟道 30.00V 135.00A 405.00A 1.50V 20.00V 1.70mΩ 2.70mΩ 0.00mΩ AON6406/AON6512/AON6500/AON6560
HMS150N03D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 30.00V 150.00A 340.00A 1.70V 20.00V 1.50mΩ 2.00mΩ 0.00mΩ AON6406/AON6512/AON6500/AON6560
HMS200N03D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 30.00V 200.00A 600.00A 1.50V 20.00V 0.80mΩ 0.00mΩ 0.00mΩ AON6406/AON6512/AON6500/AON6560
HMS135N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 135.00A 405.00A 2.50V 20.00V 2.20mΩ 3.20mΩ 0.00mΩ AON6590/AON6144/AON6152/AON6154/AON6156
HMS150N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 50.00A 400.00A 1.70V 20.00V 1.60mΩ 1.90mΩ 0.00mΩ AON6590/AON6144
HMS190N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 185.00A 400.00A 1.50V 20.00V 1.00mΩ 1.40mΩ 0.00mΩ AON6590/AON6144