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深圳市虹美功率半导体有限公司

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中压大电流SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS35N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 35.00A 105.00A 1.60V 20.00V 9.10mΩ 12.00mΩ 0.00mΩ AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS60N06D SGT工艺 (Split Gate) DFN5X6-8L N 60.00V 240.00A 60.00A 1.65V 20.00V 4.40mΩ 6.40mΩ 0.00mΩ AON6248/AON6266
HMS60N06Q SGT工艺 (Split Gate) DFN3X3-8L N 60.00V 240.00A 60.00A 1.65V 20.00V 4.40mΩ 6.40mΩ 0.00mΩ AON6248/AON6266
HMS135N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 135.00A 405.00A 2.50V 20.00V 2.20mΩ 3.20mΩ 0.00mΩ AON6590/AON6144/AON6152/AON6154/AON6156
HMS150N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 50.00A 400.00A 1.70V 20.00V 1.60mΩ 1.90mΩ 0.00mΩ AON6590/AON6144
HMS190N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 185.00A 400.00A 1.50V 20.00V 1.00mΩ 1.40mΩ 0.00mΩ AON6590/AON6144
HMS35N06Q SGT工艺
(Split Gate)
DFN3X3-8L N沟道 60.00V 35.00A 105.00A 1.60V 20.00V 9.10mΩ 12.00mΩ 0.00mΩ AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS80N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 80.00A 320.00A 1.70V 20.00V 3.50mΩ 4.00mΩ 0.00mΩ AON6242/AON6244/AON6246/AON6260/AON6160/AON644
HMS150N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 150.00A 600.00A 2.50V 20.00V 2.80mΩ 3.10mΩ 0.00mΩ AON6160