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深圳市虹美功率半导体有限公司

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中压大电流SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS35N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 35.00A 105.00A 1.60V 20.00V 9.10mΩ 12.00mΩ 0.00mΩ AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS18N10D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 100.00V 18.00A 72.00A 1.80V 20.00V 20.00mΩ 30.00mΩ 0.00mΩ AON6484/AON6486AON7292/AON7296/AON7450
HMS40N10KA SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ AOT414/AOT416/IRF1310/MTB40N10/RFP40N10/MTP40N10/SUD40N10/SUP40N10
HMS35N06Q SGT工艺
(Split Gate)
DFN3X3-8L N沟道 60.00V 35.00A 105.00A 1.60V 20.00V 9.10mΩ 12.00mΩ 0.00mΩ AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS18N10Q SGT工艺
(Split Gate)
DFN3X3-8L N沟道 100.00V 18.00A 72.00A 1.80V 20.00V 20.00mΩ 30.00mΩ 0.00mΩ AON6484/AON6486AON7292/AON7296/AON7450
HMS35N10K SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 35.00A 105.00A 1.80V 20.00V 23.00mΩ 33.00mΩ 0.00mΩ SUD40N10
HMS40N10A SGT工艺
(Split Gate)
TO-220 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ AOT414/AOT416/IRF1310/MTB40N10/RFP40N10/MTP40N10/SUD40N10/SUP40N10
HMS65N10KA SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ SUD40N10
HMS20N15KA SGT工艺
(Split Gate)
TO-252 N沟道 150.00V 20.00A 80.00A 1.90V 20.00V 56.00mΩ 68.00mΩ 0.00mΩ AOD254/AOD256/AOD4454/AP20N15GH/IRFR24N15D/SUD15N15/SUD25N15/IRFR4615/IRFR18N15D