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深圳市虹美功率半导体有限公司

Language:English

中压大电流SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS50N03Q 0.00V 0.00A 0.00A 0.00V 0.00V 0.00mΩ 0.00mΩ 0.00mΩ
HMS45P06D SGT工艺(Split Gate) DFN5X6-8L P沟道 -60.00V -45.00A -135.00A -1.80V -20.00V 9.00mΩ 11.30mΩ 0.00mΩ
HMS85P06/K SGT工艺(Split Gate) TO-220/TO-252 P沟道 -60.00V -85.00A -255.00A -1.80V -20.00V 9.00mΩ 11.30mΩ 0.00mΩ
HMS35N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 35.00A 105.00A 1.60V 20.00V 9.10mΩ 12.00mΩ 0.00mΩ AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS60N06D SGT工艺 (Split Gate) DFN5X6-8L N 60.00V 240.00A 60.00A 1.65V 20.00V 4.40mΩ 6.40mΩ 0.00mΩ AON6248/AON6266
HMS60N06Q SGT工艺 (Split Gate) DFN3X3-8L N 60.00V 240.00A 60.00A 1.65V 20.00V 4.40mΩ 6.40mΩ 0.00mΩ AON6248/AON6266
HMS50N06K SGT工艺
(Split Gate)
TO-252 N沟道 60.00V 50.00A 200.00A 1.80V 20.00V 6.50mΩ 7.50mΩ 0.00mΩ STP50N06/IRFZ44N/SUD50N06/FQP50N06 SSF6808/AP50N06/PHD50N06/FTD50N06
HMS3205D SGT工艺
(Split Gate)
TO-263 N沟道 60.00V 120.00A 480.00A 1.70V 20.00V 3.50mΩ 4.00mΩ 0.00mΩ IRF3205/DFP3205/MXP6008/RU3205/SSF5508/KIA3205/JCS3205C/RU6099/MT3205/UF3205/YR3205/JCS110N05/IRF3203/WFP3205
HMS3205K SGT工艺
(Split Gate)
TO-252 N沟道 60.00V 120.00A 480.00A 1.70V 20.00V 3.50mΩ 4.00mΩ 0.00mΩ IRF3205/DFP3205/MXP6008/RU3205/SSF5508/KIA3205/JCS3205C/RU6099/MT3205/UF3205/YR3205/JCS110N05/IRF3203/WFP3205
HMS80N85D SGT工艺
(Split Gate)
TO-263 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 0.00mΩ 0.00mΩ
HMS18N10D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 100.00V 18.00A 72.00A 1.80V 20.00V 20.00mΩ 30.00mΩ 0.00mΩ AON6484/AON6486AON7292/AON7296/AON7450
HMS40N10KA SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ AOT414/AOT416/IRF1310/MTB40N10/RFP40N10/MTP40N10/SUD40N10/SUP40N10
HMS4030D SGT工艺
(Split Gate)
TO-263 N沟道 100.00V 115.00A 345.00A 2.50V 20.00V 8.50mΩ 0.00mΩ 0.00mΩ IRLB4030/IRFB4310/AOT1100/AOT290/AOT410
HMS120N03D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 30.00V 120.00A 340.00A 1.70V 20.00V 1.95mΩ 2.85mΩ 0.00mΩ AON6512
HMS135N03D SGT工艺(Split Gate) DFN5X6-8L N沟道 30.00V 135.00A 405.00A 1.50V 20.00V 1.70mΩ 2.70mΩ 0.00mΩ AON6406/AON6512/AON6500/AON6560
HMS150N03D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 30.00V 150.00A 340.00A 1.70V 20.00V 1.50mΩ 2.00mΩ 0.00mΩ AON6406/AON6512/AON6500/AON6560
HMS200N03D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 30.00V 200.00A 600.00A 1.50V 20.00V 0.80mΩ 0.00mΩ 0.00mΩ AON6406/AON6512/AON6500/AON6560
HMS135N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 135.00A 405.00A 2.50V 20.00V 2.20mΩ 3.20mΩ 0.00mΩ AON6590/AON6144/AON6152/AON6154/AON6156
HMS150N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 50.00A 400.00A 1.70V 20.00V 1.60mΩ 1.90mΩ 0.00mΩ AON6590/AON6144
HMS190N04D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 40.00V 185.00A 400.00A 1.50V 20.00V 1.00mΩ 1.40mΩ 0.00mΩ AON6590/AON6144
HMS35N06Q SGT工艺
(Split Gate)
DFN3X3-8L N沟道 60.00V 35.00A 105.00A 1.60V 20.00V 9.10mΩ 12.00mΩ 0.00mΩ AON6248/AON7246/AON7262E/SiR662DP/SiR670DP/AON7264E/AON7444/SiR688DP/Si7164DP/IRLH5036/IRFH5006/SiR664DP/IRFH5106
HMS80N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 80.00A 320.00A 1.70V 20.00V 3.50mΩ 4.00mΩ 0.00mΩ AON6242/AON6244/AON6246/AON6260/AON6160/AON644
HMS150N06D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 60.00V 150.00A 600.00A 2.50V 20.00V 2.80mΩ 3.10mΩ 0.00mΩ AON6160
HMS50N06 SGT工艺
(Split Gate)
TO-220 N沟道 60.00V 50.00A 200.00A 1.80V 20.00V 6.50mΩ 7.50mΩ 0.00mΩ STP50N06/IRFZ44N/SUD50N06/FQP50N06 SSF6808/AP50N06/PHD50N06/FTD50N06
HMS3205 SGT工艺
(Split Gate)
TO-220 N沟道 60.00V 120.00A 480.00A 1.70V 20.00V 3.50mΩ 4.00mΩ 0.00mΩ IRF3205/DFP3205/MXP6008/RU3205/SSF5508/KIA3205/JCS3205C/RU6099/MT3205/UF3205/YR3205/JCS110N05/IRF3203/WFP3205
HMS60N08D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 80.00V 60.00A 180.00A 2.50V 20.00V 6.80mΩ 7.80mΩ 0.00mΩ AON6278
HMS85N08K SGT工艺
(Split Gate)
TO-252 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 7.80mΩ 0.00mΩ
HMS80N85 SGT工艺
(Split Gate)
TO-220 N沟道 80.00V 85.00A 255.00A 3.00V 20.00V 6.80mΩ 0.00mΩ 0.00mΩ
HMS18N10Q SGT工艺
(Split Gate)
DFN3X3-8L N沟道 100.00V 18.00A 72.00A 1.80V 20.00V 20.00mΩ 30.00mΩ 0.00mΩ AON6484/AON6486AON7292/AON7296/AON7450
HMS35N10K SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 35.00A 105.00A 1.80V 20.00V 23.00mΩ 33.00mΩ 0.00mΩ SUD40N10
HMS40N10A SGT工艺
(Split Gate)
TO-220 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ AOT414/AOT416/IRF1310/MTB40N10/RFP40N10/MTP40N10/SUD40N10/SUP40N10
HMS40N10D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 100.00V 40.00A 160.00A 1.70V 20.00V 7.20mΩ 9.50mΩ 0.00mΩ AON6224/AON6298
HMS60N10DA SGT工艺
(Split Gate)
DFN5X6-8L N沟道 100.00V 60.00A 240.00A 1.70V 20.00V 7.20mΩ 0.00mΩ 0.00mΩ AON6298/AON6450/SiR878ADP/SM1A06NSKP/SiR876ADP/SiR882ADP/SiR846ADP/SiR804DP/SiR870ADP/SiJ470DP
HMS65N10KA SGT工艺
(Split Gate)
TO-252 N沟道 100.00V 40.00A 120.00A 1.50V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ SUD40N10
HMS125N10D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 100.00V 125.00A 500.00A 2.50V 20.00V 3.80mΩ 0.00mΩ 0.00mΩ
HMS4030 SGT工艺
(Split Gate)
TO-220 N沟道 100.00V 115.00A 345.00A 2.50V 20.00V 8.50mΩ 0.00mΩ 0.00mΩ IRLB4030/IRFB4310/AOT1100/AOT290/AOT410
HMS4110T SGT工艺
(Split Gate)
TO-247 N沟道 100.00V 180.00A 720.00A 3.00V 20.00V 3.00mΩ 0.00mΩ 0.00mΩ IRFB4110/IRFB4310/AOT1100/AOT290/AOT410
HMS10N15D SGT工艺
(Split Gate)
DFN5X6-8L N沟道 150.00V 10.00A 31.80A 2.00V 20.00V 57.00mΩ 0.00mΩ 0.00mΩ AON6454A
HMS20N15KA SGT工艺
(Split Gate)
TO-252 N沟道 150.00V 20.00A 80.00A 1.90V 20.00V 56.00mΩ 68.00mΩ 0.00mΩ AOD254/AOD256/AOD4454/AP20N15GH/IRFR24N15D/SUD15N15/SUD25N15/IRFR4615/IRFR18N15D
HMS100N15 SGT工艺(Split Gate) TO-220 N沟道 150.00V 100.00A 300.00A 3.00V 20.00V 6.60mΩ 0.00mΩ 0.00mΩ IRFB52N15D/IRFB41N15D/IRF3415/IRFB4615/IRFB5615/STP50N15/IXTH50N15/IRFB4321/G/SUP85N15