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深圳市虹美功率半导体有限公司

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低压SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS65N15GA 0.00V 0.00A 0.00A 0.00V 0.00V 0.00mΩ 0.00mΩ 0.00mΩ
HMS4354 SGT工艺
(Split Gate)
SOP8 N沟道 30.00V 30.00A 90.00A 1.60V 20.00V 1.80mΩ 2.50mΩ 0.00mΩ AO4354
HMS4240 SGT工艺
(Split Gate)
SOP8 N沟道 40.00V 30.00A 90.00A 1.50V 20.00V 1.40mΩ 1.90mΩ 0.00mΩ AO4240/IRF7842/Si4840BDY/Si4124DY
HMS4438 SGT工艺
(Split Gate)
SOP8 N沟道 60.00V 10.00A 60.00A 1.80V 20.00V 12.00mΩ 16.00mΩ 0.00mΩ AO4438/ME4436/Si4436DY/ETM6009/Si4850EY/IRF7478/IRF7478Q/IRF7855
HMS4264 SGT工艺
(Split Gate)
SOP8 N沟道 60.00V 14.00A 42.00A 1.75V 20.00V 8.50mΩ 11.00mΩ 0.00mΩ AO4264
HMS4260 SGT工艺
(Split Gate)
SOP8 N沟道 60.00V 20.00A 130.00A 1.70V 20.00V 4.00mΩ 4.60mΩ 0.00mΩ AO4260
HMS4444B SGT工艺
(Split Gate)
SOP8 N沟道 80.00V 10.00A 30.00A 2.50V 20.00V 13.00mΩ 0.00mΩ 0.00mΩ AO4444L/AO4448
HMS4444A SGT工艺
(Split Gate)
SOP8 N沟道 80.00V 17.00A 51.00A 2.50V 20.00V 6.80mΩ 0.00mΩ 0.00mΩ AO4444L/AO4448
HMS4N10MR SGT工艺
(Split Gate)
SOT23-3L N沟道 100.00V 4.00A 12.00A 1.20V 20.00V 95.00mΩ 115.00mΩ 0.00mΩ Si2328/AO3442/IRLML0100/ME2328
HMS6N10PR SGT工艺
(Split Gate)
SOT-89 N沟道 100.00V 6.00A 18.00A 1.20V 20.00V 95.00mΩ 115.00mΩ 0.00mΩ STP6N10/UTC6N10/AOH3106/SiHFL110/ IRFL4310/AOH3110/IRLL110/SiHLL110/IRFL110
HMS4454 SGT工艺
(Split Gate)
SOP8 N沟道 100.00V 8.00A 40.00A 1.80V 20.00V 20.00mΩ 30.00mΩ 0.00mΩ AO4454/AO4452/FDS3672
HMS4296 SGT工艺
(Split Gate)
SOP8 N沟道 100.00V 12.00A 48.00A 1.70V 20.00V 9.90mΩ 11.50mΩ 0.00mΩ AO4296
HMS4294 SGT工艺
(Split Gate)
SOP8 N沟道 100.00V 14.00A 56.00A 1.70V 20.00V 8.80mΩ 9.80mΩ 0.00mΩ AO4294
HMS4290 SGT工艺
(Split Gate)
SOP8 N沟道 100.00V 16.00A 64.00A 1.70V 20.00V 7.90mΩ 9.10mΩ 0.00mΩ AO4290
HMS4488 SGT工艺
(Split Gate)
SOP8 N沟道 150.00V 5.00A 15.00A 2.00V 20.00V 57.00mΩ 70.00mΩ 0.00mΩ AO4488/FDS86242/FDS2572/DTM5106