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深圳市虹美功率半导体有限公司

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BMS/电动车/平衡车 SGT MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS135N10/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 100.00V 135.00A 405.00A 3.00V 0.00V 3.40mΩ 0.00mΩ 0.00mΩ
HMS120N10/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 100.00V 120.00A 360.00A 3.00V 0.00V 4.60mΩ 0.00mΩ 0.00mΩ
HMS120N10K_HMS120N10G SGT工艺(Split Gate) PDFN5X6-8L/TO-252 N沟道 100.00V 120.00A 360.00A 3.00V 0.00V 4.60mΩ 0.00mΩ 0.00mΩ
HMS85N10/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 100.00V 85.00A 255.00A 3.00V 0.00V 7.00mΩ 0.00mΩ 0.00mΩ
HMS80N10/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 100.00V 80.00A 240.00A 3.00V 0.00V 7.50mΩ 0.00mΩ 0.00mΩ
HMS135N85/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 85.00V 135.00A 405.00A 3.00V 0.00V 3.30mΩ 0.00mΩ 0.00mΩ
HMS120N85/D SGT工艺(Split Gate) TO-220/TO-263 N沟道 85.00V 120.00A 360.00A 3.00V 0.00V 4.50mΩ 0.00mΩ 0.00mΩ
HMS120N85G/K SGT工艺(Split Gate) PDFN5X6-8L/TO-252 N沟道 85.00V 120.00A 360.00A 3.00V 0.00V 0.00mΩ 4.50mΩ 0.00mΩ
HMS100N85/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 85.00V 100.00A 300.00A 3.00V 0.00V 5.40mΩ 0.00mΩ 0.00mΩ
HMS80N85/D/G/K SGT工艺(Split Gate) TO-220/TO-263/PDFN5X6-8L/TO-252 N沟道 85.00V 80.00A 240.00A 3.00V 0.00V 6.90mΩ 0.00mΩ 0.00mΩ
HMS100N15/D SGT工艺(Split Gate) TO-220/TO-263 N沟道 150.00V 100.00A 300.00A 3.00V 0.00V 6.50mΩ 0.00mΩ 0.00mΩ
HMS100N20/D SGT工艺(Split Gate) TO-220/TO-263 N沟道 200.00V 100.00A 300.00A 3.00V 0.00V 9.30mΩ 0.00mΩ 0.00mΩ
HMS80N25/D SGT工艺(Split Gate) TO-220/TO-263 N沟道 250.00V 80.00A 240.00A 3.00V 0.00V 18.00mΩ 0.00mΩ 0.00mΩ