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 高压MOS-深圳市虹美功率半导体有限公司
Language:English

深圳市虹美功率半导体有限公司

Language:English

高压MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HM2N25MR 平面工艺
(planar)
SOT23-3L N沟道 250.00V 2.00A 10.00A 2.50V 20.00V 1.30mΩ 0.00mΩ 0.00mΩ
HM10N65D 平面工艺
(planar)
TO-263 N沟道 650.00V 10.00A 40.00A 3.00V 30.00V 0.70mΩ 0.00mΩ 0.00mΩ FQP10N65/FQN10N65/UTC10N65/STP10N65
HM12N65D 平面工艺
(planar)
TO-263 N沟道 650.00V 12.00A 48.00A 3.00V 30.00V 0.63mΩ 0.00mΩ 0.00mΩ FQP12N65/FQN12N65/UTC12N65/STP12N65
HM15N50D 平面工艺
(planar)
TO-263 N沟道 500.00V 15.00A 60.00A 3.50V 30.00V 0.35mΩ 0.00mΩ 0.00mΩ FQP15N50/FQN15N50/UTC15N50/STP15N50
HM3N100D 平面工艺
(planar)
TO-263 N沟道 1000.00V 3.00A 12.00A 3.50V 30.00V 3.50mΩ 0.00mΩ 0.00mΩ IXTA3N100/AOTF3N100/MTP3N100
HM0565 平面工艺
(planar)
SOT23-3L N沟道 650.00V 0.50A 2.00A 3.00V 30.00V 9.00mΩ 0.00mΩ 0.00mΩ AO3160/AO3162
HM1N50MR 平面工艺
(planar)
SOT23-3L N沟道 500.00V 1.00A 3.00A 3.00V 30.00V 9.20mΩ 0.00mΩ 0.00mΩ FQD1N50/STP1N50/UTC1N50

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