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 高压超结MOS-深圳市虹美功率半导体有限公司
Language:English

深圳市虹美功率半导体有限公司

Language:English

高压超结MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HMS11N70Q 超结工艺
(Super-Junction)
DFN5X6-8L N沟道/带ESD 700.00V 11.00A 30.00A 3.00V 30.00V 400.00mΩ 0.00mΩ 0.00mΩ IPP70R450P6/IPP70R450C6/IPP70R450E6/IPP70R450E6/IPP70R450C6/多层外延工艺,抗冲击性强
HMS15N70Q 超结工艺
(Super-Junction)
DFN5X6-8L N沟道 700.00V 15.00A 45.00A 3.00V 30.00V 300.00mΩ 0.00mΩ 0.00mΩ IPP70R340P6/IPP70R340C6/ IPP70R340E6/IPP70R340C6/ IPP70R340E6
HMS15N65Q 超结工艺
(Super-Junction)
DFN5X6-8L N沟道 650.00V 15.00A 45.00A 3.00V 30.00V 230.00mΩ 0.00mΩ 0.00mΩ IPP65R225C7/IPA65R225C7 IPP65R280/IPA65R280
HMS11N65Q 超结工艺
(Super-Junction)
DFN5X6-8L N沟道/带ESD 650.00V 11.00A 33.00A 3.00V 30.00V 300.00mΩ 0.00mΩ 0.00mΩ IPP65R380/IPA65R380/多层外延工艺,抗冲击性强
HMS13N65Q 超结工艺
(Super-Junction)
DFN5X6-8L N沟道 650.00V 15.00A 45.00A 3.00V 30.00V 240.00mΩ 0.00mΩ 0.00mΩ IPP65R280C6/IPA65R280C6/SGF280N65W3/IPP65R280E6/IPA65R280E6/LSC13N65/LSD13N65/多层外延工艺,抗冲击性强

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