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 高压MOS-深圳市虹美功率半导体有限公司
Language:English

深圳市虹美功率半导体有限公司

Language:English

高压MOS

产品列表


型号(Part Number) 工艺
(Technology)
封装(Package) 沟道(Polarity) VDS(Max)
BVDSS(V)
ID(Max)
ID(A)
IDM VTH
(Typ)
VGS RDS(ON)
@-10VTyp
(mΩ)
RDS(ON)
@-4.5VTyp
(mΩ)
RDS(ON)
@-2.5VTyp
(mΩ)
直接替代型号(compatible)


Reset

HM5N60I  平面工艺
(planar)
TO-251 N沟道 600.00V 5.00A 20.00A 3.00V 30.00V 2.00mΩ 0.00mΩ 0.00mΩ FQP5N60/FQN5N60/UTC5N60/STP5N60
HM1N60R 平面工艺
(planar)
SOT-223 N沟道 600.00V 1.30A 5.00A 3.00V 30.00V 11.00mΩ 0.00mΩ 0.00mΩ FQP1N60/FQN1N60/UTC1N60/STP1N60
HM4N60R 平面工艺
(planar)
SOT-223 N沟道 600.00V 4.00A 16.00A 3.00V 30.00V 1.70mΩ 0.00mΩ 0.00mΩ FQP4N60/FQN4N60/UTC4N60/STP4N60
HM4N70I 平面工艺
(planar)
TO-251 N沟道 700.00V 4.00A 16.00A 3.00V 30.00V 2.50mΩ 0.00mΩ 0.00mΩ FQP4N70/FQA4N70/FQB4N70/SVF4N70/IXTH4N70/UTC4N7
HM6N70I 平面工艺
(planar)
TO-251 N沟道 700.00V 6.00A 24.00A 3.00V 30.00V 1.80mΩ 0.00mΩ 0.00mΩ FQP6N70/FQA6N70/FQB6N70/SVF6N70/IXTH6N70/UTC6N70
HM3N80I 平面工艺
(planar)
TO-251 N沟道 800.00V 3.00A 12.00A 3.00V 30.00V 4.00mΩ 0.00mΩ 0.00mΩ FQP3N80/FQN3N80/UTC3N80/STP3N80
HM3N90I 平面工艺
(planar)
TO-251 N沟道 900.00V 3.00A 12.00A 3.00V 30.00V 4.70mΩ 0.00mΩ 0.00mΩ FQP3N90/FQA3N90/UTC3N90/STP3N90
HM2N60 平面工艺
(planar)
TO-251 N沟道 600.00V 2.00A 6.00A 3.00V 30.00V 3.80mΩ 0.00mΩ 0.00mΩ FQP2N60/FQN2N60/UTC2N60/STP2N60/2SK3067
HM4N60 平面工艺
(planar)
TO-251 N沟道 600.00V 4.00A 16.00A 3.00V 30.00V 1.70mΩ 0.00mΩ 0.00mΩ FQP4N60/FQN4N60/UTC4N60/STP4N60
HM2N65R 平面工艺
(planar)
SOT-223 N沟道 650.00V 2.00A 6.00A 3.00V 30.00V 7.80mΩ 0.00mΩ 0.00mΩ FQP2N65/FQN2N65/UTC2N65/STP2N65
HM4N65R 平面工艺
(planar)
SOT-223 N沟道 650.00V 4.00A 16.00A 3.00V 30.00V 2.40mΩ 0.00mΩ 0.00mΩ FQP4N65/FQN4N65/UTC4N65/STP4N65
HM2N50R 平面工艺
(planar)
SOT-223 N沟道 500.00V 2.00A 4.00A 3.00V 30.00V 5.00mΩ 0.00mΩ 0.00mΩ FQD2N50/STP2N50/UTC2N50
HM5N50R 平面工艺
(planar)
SOT-223 N沟道 500.00V 5.00A 20.00A 3.00V 30.00V 1.50mΩ 0.00mΩ 0.00mΩ IRF830/FQD5N50/STP5N50/UTC5N50
HM1N70R 平面工艺
(planar)
SOT-223 N沟道 700.00V 1.00A 4.00A 3.00V 30.00V 10.50mΩ 0.00mΩ 0.00mΩ FQP1N70/FQN1N70/UTC1N70/STP1N70
HM2N70R 平面工艺
(planar)
SOT-223 N沟道 700.00V 2.00A 8.00A 3.00V 30.00V 4.70mΩ 0.00mΩ 0.00mΩ FQP2N70/FQN2N70/UTC2N70/STP2N70
HM3N70I 平面工艺
(planar)
TO-251 N沟道 700.00V 3.00A 12.00A 3.00V 30.00V 3.00mΩ 0.00mΩ 0.00mΩ FQP3N70/FQN3N70/UTC3N70/STP3N70
HM3N40R 平面工艺
(planar)
SOT-223 N沟道 400.00V 3.00A 9.00A 3.00V 30.00V 2.80mΩ 0.00mΩ 0.00mΩ FQP3N40/STP3N40/UTC3N40/PFB3N40/FTP3N40/WFP3N40
HM3N30R 平面工艺
(planar)
SOT-223 N沟道 300.00V 3.00A 12.00A 2.70V 25.00V 2.60mΩ 0.00mΩ 0.00mΩ FQP3N30/STP3N30/UTC3N30/PFB3N30/FTP3N30/WFP3N30
HM5N30R 平面工艺
(planar)
SOT-223 N沟道 300.00V 5.00A 15.00A 2.70V 25.00V 1.20mΩ 0.00mΩ 0.00mΩ FQP5N30/STP5N30/UTC5N30/PFB5N30/FTP5N30/WFP5N30

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